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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP109N04PUJ
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The NP109N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP109N04PUJ-E1B-AY NP109N04PUJ-E2B-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 1000 p/reel
PACKAGE TO-263 (MP-25ZP) typ. 1.5 g
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
* Super low on-state resistance RDS(on) = 2.3 m MAX. (VGS = 10 V, ID = 55 A) * Low input capacitance Ciss = 6900 pF TYP. * Designed for automotive application and AEC-Q101 qualified (TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
40 20 110 440 220 1.8 175 -55 to +175 360 60 360
V V A A W W C C mJ A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Energy
Note2 Note3 Note3
EAS IAR EAR
Repetitive Avalanche Current Repetitive Avalanche Energy
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 20 V, RG = 25 , VGS = 20 0 V, L = 100 H 3. Tch 150C, RG = 25
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.68 83.3 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D19728EJ1V0DS00 (1st edition) Date Published April 2009 NS Printed in Japan
2009
NP109N04PUJ
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD
TEST CONDITIONS VDS = 40 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 5 V, ID = 55 A VGS = 10 V, ID = 55 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 55 A, VGS = 10 V, RG = 0
MIN.
TYP.
MAX. 1 100
UNIT
A
nA V S
2.0 45
3.0 102 1.7 6900 930 360 40 20 85 15
4.0
Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
2.3 10350 1400 650 90 50 170 40 180
m pF pF pF ns ns ns ns nC nC nC
VDD = 32 V, VGS = 10 V, ID = 110 A IF = 110 A, VGS = 0 V IF = 110 A, VGS = 0 V, di/dt = 100 A/s
115 26 38 0.9 57 105
VF(S-D) trr Qrr
1.5
V ns nC
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D19728EJ1V0DS
NP109N04PUJ
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
300
120
dT - Percentage of Rated Power - %
100 80 60 40 20 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse) ID(DC) DC RDS(on) Limited (VGS = 10 V)
w Po
PW
PT - Total Power Dissipation - W
250 200 150 100 50 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C
=
1i 0
0
ID - Drain Current - A
100
s
1i m
i
s
1i 0 m
i
co Se
s
y ar nd
10
D er ip iss
B do ke ra w n
d it e im nL
io at
1
TC = 25C Single Pulse
d it e m Li
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
100 10 1 0.1 0.01
Rth(ch-A) = 83.3C/W
Rth(ch-C) = 0.68C/W
Single Pulse 0.001 1m
10 m 100 m 1 PW - Pulse Width - s
Data Sheet D19728EJ1V0DS
10
100
1000
3
NP109N04PUJ
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
500 400
ID - Drain Current - A ID - Drain Current - A
1000 100 10 1 0.1 0.01 0.001 VDS = 10 V Pulsed 1 2 3 4 5 TA = -55C 25C 85C 150C 175C
300 200 100 0 0 0.2 0.4 0.6 0.8 1
VDS - Drain to Source Voltage - V
VGS = 10 V Pulsed
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
4
1000 TA = -55C 25C 85C
3
100
2
10
1 VDS = VGS ID = 250 A 0 -100 -50 0 50 100 150 200
150C 175C VDS = 5 V Pulsed
1 1 10 100 1000
ID - Drain Current - A
Tch - Channel Temperature - C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m
5 4 3 2 1 0 1 10 100 1000 VGS = 10 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
5 4 3 2 1 0 0 5 10 15 20 25
VGS - Gate to Source Voltage - V
ID = 55 A Pulsed
ID - Drain Current - A
4
Data Sheet D19728EJ1V0DS
NP109N04PUJ
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
5 4 3 2 1 0 -100 VGS = 10 V ID = 55 A Pulsed -50 0 50 100 150 200
Ciss, Coss, Crss - Capacitance - pF
10000
Ciss Coss
1000 VGS = 0 V f = 1 MHz 100 0.1 1
Crss
10
100
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
VDS - Drain to Source Voltage - V
16 14 VDD = 32 V 20 V 8V 12 10 8 VGS VDS ID = 110 A 0 20 40 60 80 100 120 6 4 2
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
35 30 25 20 15 10 5 0
100
td(off) td(on) tr tf VDD = 20 V VGS = 10 V RG = 0 0.1 1 10 100 1000
10
1
0 140
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
1000
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
100 0V 10 VGS = 10 V
100
10 di/dt = 100 A/s VGS = 0 V 1 0.1 1 10 100 1000
1 Pulsed 0.1 0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
Data Sheet D19728EJ1V0DS
5
NP109N04PUJ
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
1.35 0.3
No plating
10.0 0.3 7.88 MIN. 4
4.45 0.2 1.3 0.2
8.0 TYP.
9.15 0.3
15.25 0.5
0.5
0.025 to 0.25
0.6 0
2.54 12 3
2.5
1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
6
2.54 0.25
Data Sheet D19728EJ1V0DS
0.75 0.2
.2 0 to 8 0.25
NP109N04PUJ
TAPE INFORMATION
There are two types (-E1B, -E2B) of taping depending on the direction of the device.
Draw-out side --* 6;2-
Reel side
--
* 6;2-
MARKING INFORMATION
NEC 109N04 UJ
Pb-free plating marking Abbreviation of part number Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP109N04PUJ should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method Infrared reflow
Soldering Conditions Maximum temperature (Package's surface temperature): 260C or below Time at maximum temperature: 10 seconds or less Time of temperature higher than 220C: 60 seconds or less Preheating time at 160 to 180C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Recommended Condition Symbol IR60-00-3
Partial heating
Maximum temperature (Pin temperature): 350C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D19728EJ1V0DS
7
NP109N04PUJ
* The information in this document is current as of April, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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